| PART |
Description |
Maker |
| PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW
|
NXP Semiconductors
|
| PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
|
NXP Semiconductors
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS4041SPN |
60 V NPN/PNP low V_CEsat (BISS) transistor
60 V NPN/PNP low VCEsat (BISS) transistor
60 V NPN-PNP low V_CEsat (BISS) transistor 6700 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS5230T PBSS5220T PBSS5220T215 |
20V, 2A PNP low VCEsat (BISS) transistor
20 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PBSS5580PA PBSS5580PA-15 |
80 V, 4 A PNP low V_CEsat (BISS) transistor 4000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
80 V, 4 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS301PD PBSS301PD115 |
20 V, 4 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
20 V, 4 A PNP low VCEsat (BISS) transistor 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS5350SS PBSS4350SPN PBSS4350SS PBSS5350SS115 |
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
NXP[NXP Semiconductors]
|
| PBSS5160PAP |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBLS4001V PBLS4001Y |
40 V PNP BISS loadswitch
|
NXP Semiconductors N.V.
|
| PBLS1503V PBLS1503Y |
15 V PNP BISS loadswitch
|
NXP Semiconductors
|
|
